NR9-1000P
Negative Resist NR9-1000P is a negative tone photoresist designed for 365 nm wavelength
exposure, using tools such as wafer steppers, scanning projection aligners, proximity printers and
contact printers.
These are the advantages of NR9-1000P over other resists:
-superior resolution capability of less than 0.5 μm
-fast develop time
- fast photospeed
-temperature resistance of up to 100°C
-superior adhesion to substrates without a primer
-easy resist removal in Resist Remover RR4
-shelf life exceeding 3 years at a room temperature storage.
The formulation and processing of NR9-1000P were designed with regard to occupational and
environmental safety. The principal solvent in NR9-1000P is cyclohexanone and development of
NR9-1000P is accomplished in a basic water solution.
Properties
♦ Solids content (%): 19-23
♦ Principal solvent: cyclohexanone
♦ Appearance: light yellow liquid
♦ Coating characteristic: very uniform, striation free
♦ Film thickness information:
Coating spin speed, 40
s spin (rpm)
Film thickness after 150°C hotplate
bake for 60 s (nm)
800 1900-2100
2000 1170-1290
3000 950-1050
4000 817-903
5000 712-788
♦ Sensitivity at 365 nm exposure wavelength (mJ/cm² for 1 μm thick film): 21
♦ Guaranteed shelf life at 25°C storage (years): 3
Processing
1 Application of resist by spin coating at selected spin speed for 40 s.
2 Begin dispensing Edge Bead Remover EBR2 simultaneously onto the top and bottom surfaces
of the spinning, coated substrate through nozzles 0.5-1.0 cm from the edge of the substrate as soon
as edge bead forms (3-5 s after ceasing resist dispense). Stop dispensing EBR2 5 seconds prior to
completion of spin coating cycle.
3 150°C hotplate bake for 60 s. (softbake).
4 Resist exposure with a tool emitting 365 nm wavelength.
5 100°C hotplate bake for 60 s. (post-exposure bake).
6 Resist development in Resist Developer RD6 by spray or immersion.Development time for 1
μm thick film, for example, is 10 s. To increase development time to 50 s, combine RD6/water 3:1.
7 Resist rinse in deionized water until water resistivity reaches prescribed limit.
8 Drying of resist.
9 Removal of resist in Resist Remover RR4 at 110°C or in acetone.
Note: The above procedure refers to substrates, which are good conductors of heat such as
silicon, GaAs etc. Bake times need to be increased by a factor of 3.5 for substrates that are
poor conductors of heat such as glass.
Handling Precautions
Negative Resist NR9-1000P is a flammable liquid. Handle it with care. Keep it away from heat,
sparks and flames. Use adequate ventilation. It may be harmful if swallowed or touched. Avoid
contact with liquid, vapor or spray mist. Wear chemical goggles, rubber gloves and protective
coating.

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