NR5-8000
Negative Resist NR5-8000 is a negative tone photoresist designed for thick film applications and is
compatible with UV exposure tools emitting at the 365 nm wavelength, including wafer steppers,
scanning projection aligners, proximity printers and contact printers.
These are the advantages of NR5-8000 over other resists:
- superior resolution capability
- high photospeed which translates into high exposure throughput
- fast development time
- superior temperature resistance of up to 180°C
- superior selectivity in RIE processes
- easy resist removal using Resist Remover RR41
- shelf life exceeding 3 years at room temperature storage.
The formulation and processing of NR5-8000 were designed with regard to occupational and
environmental safety. The principal solvent in NR5-8000 is cyclohexanone and development of
NR5-8000 is accomplished in a basic water solution.
Properties
♦ Solids content (%): 39-43
♦ Principal solvent: cyclohexanone
♦ Appearance: light yellow liquid
♦ Coating characteristic: very uniform, striation free
♦ Film thickness:
Coating Spin
Speed (rpm)
Spin Time
(s)
Oven Bake Time
(min) 80°C
Hotplate Bake
Time
(s) 150°C
Post Exposure
Hotplate Bake
Time (s) 100°C
Film Thickness
(nm)
250 30 15 followed by 180 240 90000-95000
400 30 15 followed by 120 120 54000-60000
1000 40 0 60 60 12500-14500
2000 40 0 60 60 9000-12000
3000 40 0 60 60 7500-8500
4000 40 0 60 60 6250-6750
5000 40 0 60 60 5750-6250
♦ Sensitivity at 365 nm exposure wavelength (mJ/cm² for 1 μm thick film): 21
♦ Guaranteed shelf life at 25°C storage (years): 3
Processing
1 Application of resist by spin coating at a selected spin speed for a time designated in a film
thickness vs. spin speed table on page 1.
2 Softbake procedure is determined by film thickness. Please refer to bake instructions on page
1.
3 Resist exposure in a tool emitting 365 nm wavelength. Please determine 365 nm exposure
light intensity (mW/cm²) with a proper gauge. Multiply resist thickness (μm) by 21 mJ/cm² to
obtain exposure dose. Divide exposure dose (mJ/cm²) by light intensity (mW/cm²) at 365 nm
wavelength to obtain exposure time (s).
4 100°C hotplate bake for a time depending on a film thickness. Please refer to bake
instructions on page 1.
5 Resist development in Resist Developer RD6 by spray or immersion at 20-25
°C.Development time for an 8 μm thick film is 40 s and for 100 μm thick film is 330 s.
6 Resist rinse in deionized water until water resistivity reaches prescribed limit.
7 Drying of resist.
8 Removal of resist in Resist Remover RR41 at 100 °C.
The above procedure refers to substrates, which are good conductors of heat such as silicon, GaAs
etc. Bake times need to be increased by a factor of 3.5 for substrates that are poor conductors of
heat, such as glass.
Handling Precautions
Negative Resist NR5-8000 is a flammable liquid. Handle it with care. Keep it away from heat,
sparks and flames. Use adequate ventilation. It may be harmful if swallowed or touched. Avoid
contact with liquid, vapor or spray mist. Wear chemical goggles, rubber gloves and protective
coating.

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