负性光刻胶NR21-20000P

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美国futurrex产品	暂无	暂无	现货

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产品介绍

NR2-20000P
Negative Resist NR2-20000P is a negative tone photoresist designed for thick film applications and
is compatible with UV exposure tools emitting at the 365 nm wavelength, including wafer steppers,
scanning projection aligners, proximity printers and contact printers.
These are the advantages of NR2-20000P over other resists:
- superior resolution capability
- high photospeed which translates into high exposure throughput
- fast development time
- superb adhesion in plating
- easy resist removal using Resist Remover RR4
The formulation and processing of NR2-20000P were designed with regard to occupational and
environmental safety. The principal solvent in NR2-20000P is gammabutyrolactone and
development of NR2-20000P is accomplished in basic water solution.
Properties
♦ Solids content (%): 50-56
♦ Principal solvent: gammabutyrolactone
♦ Appearance: light yellow liquid
♦ Coating characteristic: very uniform, striation free
♦ Film thickness:
Coating Spin
Speed (rpm)
Spin Time
(s)
Softbake
Hotplate Bake
Time
(min) 70°C
Softbake
Hotplate Bake
Time
(s) 150°C
Post Exposure
Hotplate Bake
Time (s) 80°C
Film Thickness
(nm)
1500 10 20 270 600 95000-105000
2700 10 - 120 300 45000-55000
3000 40 - 60 180 18000-22000
♦ Sensitivity at 365 nm exposure wavelength (mJ/cm² for 1 μm thick film): 21
♦ Guaranteed shelf life at 5°C storage (years): 1
Processing
1 Application of resist by spin coating at a selected spin speed for a time or other coating
method such as spray coat, dip coat, roll coat, and so on.
2 Softbake procedure is determined by film thickness.
3 Resist exposure in a tool emitting 365 nm wavelength. Please determine 365 nm exposure
light intensity (mW/cm²) with a proper gauge. Multiply resist thickness (μm) by 21 mJ/cm² to
obtain exposure dose. Divide exposure dose (mJ/cm²) by light intensity (mW/cm²) at 365 nm
wavelength to obtain exposure time (s).
4 Post-exposure bake on hotplate at 80°C for a time depending on a film thickness.
5 Resist development in Resist Developer RD6 by spray or immersion at 20-25 °C.
6 Resist rinse in deionized water until water resistivity reaches prescribed limit.
7 Drying of resist.
8 Removal of resist in Resist Remover RR4 or in acetone. The above procedure refers to
substrates, which are good conductors of heat such assilicon, GaAs etc. Bake times need to be
increased by a factor of 3.5 for substrates that are poor conductors of heat, such as glass.
Handling Precautions
Negative Resist NR2-20000P is a flammable liquid. Handle it with care. Keep it away from heat,
sparks and flames. Use adequate ventilation. It may be harmful if swallowed or touched. Avoid
contact with liquid, vapor or spray mist. Wear chemical goggles, rubber gloves and protective
coating.

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